- 专利标题： Film formation apparatus and method of manufacturing semiconductor device
-
申请号： US16736886申请日： 2020-01-08
-
公开(公告)号： US11280023B2公开(公告)日： 2022-03-22
- 发明人: Tatsuji Nagaoka , Hiroyuki Nishinaka , Daisuke Tahara , Masahiro Yoshimoto
- 申请人： Tatsuji Nagaoka , Hiroyuki Nishinaka , Daisuke Tahara , Masahiro Yoshimoto
- 申请人地址： JP Nagakute; JP Kyoto; JP Kyoto; JP Kyoto
- 专利权人： Tatsuji Nagaoka,Hiroyuki Nishinaka,Daisuke Tahara,Masahiro Yoshimoto
- 当前专利权人： Tatsuji Nagaoka,Hiroyuki Nishinaka,Daisuke Tahara,Masahiro Yoshimoto
- 当前专利权人地址： JP Nagakute; JP Kyoto; JP Kyoto; JP Kyoto
- 代理机构： Sughrue Mion, PLLC
- 优先权： JPJP2019-011157 20190125
- 主分类号： C30B23/02
- IPC分类号： C30B23/02 ; C30B7/00 ; C30B7/04 ; C30B7/14 ; H01L21/02 ; C30B19/06 ; C30B29/16 ; C30B19/08
摘要：
A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.