- 专利标题： Apparatus and methods for magnetic memory devices with magnetic assist layer
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申请号： US17172190申请日： 2021-02-10
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公开(公告)号： US11283008B1公开(公告)日： 2022-03-22
- 发明人: Thao A. Nguyen , Michael Ho , Zhigang Bai , Xiaoyong Liu , Zhanjie Li , Yongchul Ahn , Hongquan Jiang , Quang Le
- 申请人： Western Digital Technologies, Inc.
- 申请人地址： US CA San Jose
- 专利权人： Western Digital Technologies, Inc.
- 当前专利权人： Western Digital Technologies, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Vierra Magen Marcus LLP
- 主分类号： G11C11/18
- IPC分类号： G11C11/18 ; H01L43/04 ; H01L27/22 ; G11C11/16 ; H01L43/06
摘要：
An apparatus is provided that includes a magnetic tunnel junction, a magnetic assist layer coupled to the magnetic tunnel junction, a non-magnetic layer disposed between the free layer and the magnetic assist layer, and a spin Hall effect layer coupled to the magnetic assist layer. The magnetic tunnel junction includes a free layer in a plane, the free layer including a switchable magnetization direction perpendicular to the plane. The magnetic assist layer includes a magnetization direction parallel to the plane and free to rotate about an axis perpendicular to the plane.
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