Invention Grant
- Patent Title: Deposition and etch processes of chromium-containing thin films for semiconductor manufacturing
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Application No.: US16456978Application Date: 2019-06-28
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Publication No.: US11289328B2Publication Date: 2022-03-29
- Inventor: Thomas Knisley , Mark Saly , Lakmal C. Kalutarage , David Thompson
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/56
- IPC: C23C16/56 ; H01L21/02 ; H01L21/311 ; C23C16/455
Abstract:
Chromium containing precursors and methods of forming chromium-containing thin films are described. The chromium precursor has a chromium-diazadiene bond or cyclopentadienyl ligand and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic chromium film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising chromium with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described. Methods of filling gaps in a substrate with a chromium-containing film are also described.
Public/Granted literature
- US20200006056A1 Deposition And Etch Processes Of Chromium-Containing Thin Films For Semiconductor Manufacturing Public/Granted day:2020-01-02
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