Invention Grant
- Patent Title: Integrated circuit and semiconductor device
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Application No.: US17038292Application Date: 2020-09-30
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Publication No.: US11289469B2Publication Date: 2022-03-29
- Inventor: Seung-Young Lee , Jong-hoon Jung , Myoung-ho Kang , Jung-ho Do
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0134544 20161017
- Main IPC: H01L27/02
- IPC: H01L27/02 ; G11C11/419 ; G11C11/40 ; H01L23/528 ; H01L27/105 ; H01L27/118 ; G11C5/14 ; G11C7/18

Abstract:
In one embodiment, the standard cell includes first and second active regions defining an intermediate region between the first and second active regions; and first, second and third gate lines crossing the first and second active regions and crossing the intermediate region. The first gate line is divided into an upper first gate line and a lower first gate line by a first gap insulating layer in the intermediate region, the second gate line is undivided, and the third gate line is divided into an upper third gate line and a lower third gate line by a second gap insulating layer in the intermediate region.
Public/Granted literature
- US20210028160A1 INTEGRATED CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2021-01-28
Information query
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