- 专利标题： Method of manufacturing trench transistor structure
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申请号： US17115799申请日： 2020-12-09
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公开(公告)号： US11289470B2公开(公告)日： 2022-03-29
- 发明人: Wei-Yu Lin , Shih-Hao Cheng
- 申请人： Powerchip Semiconductor Manufacturing Corporation
- 申请人地址： TW Hsinchu
- 专利权人： Powerchip Semiconductor Manufacturing Corporation
- 当前专利权人： Powerchip Semiconductor Manufacturing Corporation
- 当前专利权人地址： TW Hsinchu
- 代理机构： JCIPRNET
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78 ; H01L29/10 ; H01L29/06 ; H01L27/02 ; H01L21/04 ; H01L21/324 ; H01L21/761
摘要：
A method of manufacturing a trench transistor structure including the following steps is provided. A substrate structure is provided. A first region and a second region are defined in the substrate structure. The substrate structure has a first trench located in the first region and a second trench located in the second region. A transistor device is formed in the first region. The transistor device includes an electrode located in the first trench. The electrode and the substrate structure are isolated from each other. An electrostatic discharge (ESD) protection device is formed in the second region. The ESD protection device includes a main body layer located in the second trench. The main body layer has a planarized top surface. PN junctions are located in the main body layer. The main body layer and the substrate structure are isolated from each other.
公开/授权文献
- US20210091067A1 METHOD OF MANUFACTURING TRENCH TRANSISTOR STRUCTURE 公开/授权日：2021-03-25
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