Invention Grant
- Patent Title: Performing annealing process to improve fin quality of a FinFET semiconductor
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Application No.: US16158802Application Date: 2018-10-12
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Publication No.: US11302535B2Publication Date: 2022-04-12
- Inventor: Tzung-Yi Tsai , Yen-Ming Chen , Tsung-Lin Lee , Po-Kang Ho
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/32
- IPC: H01L21/32 ; H01L21/324 ; H01L29/78 ; H01L29/66 ; H01L29/161 ; H01L29/51 ; H01L21/768
Abstract:
A semiconductor device is provided. The semiconductor device has a fin structure that protrudes vertically upwards. A lateral dimension of the fin structure is reduced. A semiconductor layer is formed on the fin structure after the reducing of the lateral dimension. An annealing process is performed to the semiconductor device after the forming of the semiconductor layer. A dielectric layer is formed over the fin structure after the performing of the annealing process.
Public/Granted literature
- US20200006084A1 PERFORMING ANNEALING PROCESS TO IMPROVE FIN QUALITY OF A FINFET SEMICONDUCTOR Public/Granted day:2020-01-02
Information query
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