Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15931230Application Date: 2020-05-13
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Publication No.: US11302596B2Publication Date: 2022-04-12
- Inventor: Tatsuya Usami , Hironobu Miyamoto , Masami Sawada
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2019-134668 20190722
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/373 ; H01L29/16 ; H01L29/20 ; H01L29/24
Abstract:
A Semiconductor device includes a substrate and a thermal conductive film. The substrate has a top surface and a back surface which oppose with each other. A first opening is formed on the back surface of substrate. The thermal conductive film includes a first thermal conductive portion formed in the first opening. The first thermal conductive portion is embedded in the first opening such that a void is formed in the first opening.
Public/Granted literature
- US20210028082A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-01-28
Information query
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