公开(公告)号：US11557648B2

公开(公告)日：2023-01-17

申请号：US17115204

申请日：2020-12-08

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hiroshi Yanagigawa ,  Katsumi Eikyu ,  Masami Sawada ,  Akihiro Shimomura ,  Kazuhisa Mori

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78

Abstract: In a trench gate type power MOSFET having a super-junction structure, both improvement of a breakdown voltage of a device and reduction of on-resistance are achieved. The trench gate and a column region are arranged so as to be substantially orthogonal to each other in a plan view, and a base region (channel forming region) and the column region are arranged separately in a cross-sectional view.

公开(公告)号：US11302596B2

公开(公告)日：2022-04-12

申请号：US15931230

申请日：2020-05-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tatsuya Usami ,  Hironobu Miyamoto ,  Masami Sawada

IPC: H01L23/367 ,  H01L23/373 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24

Abstract: A Semiconductor device includes a substrate and a thermal conductive film. The substrate has a top surface and a back surface which oppose with each other. A first opening is formed on the back surface of substrate. The thermal conductive film includes a first thermal conductive portion formed in the first opening. The first thermal conductive portion is embedded in the first opening such that a void is formed in the first opening.