Invention Grant
- Patent Title: Pixel-type semiconductor light-emitting device and method of manufacturing the same
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Application No.: US16290351Application Date: 2019-03-01
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Publication No.: US11302743B2Publication Date: 2022-04-12
- Inventor: Yong-Min Kwon , Geun-Woo Ko , Jung-Wook Lee , Jong-Hyun Lee , Pun-Jae Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2018-0046290 20180420
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/50 ; H01L33/56 ; H01L33/62 ; H01L27/15 ; H01L25/075

Abstract:
A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other and arranged in a matrix form. A pad region at least partially surrounds the plurality of light-emitting device structures. The pad region is disposed outside of the plurality of light-emitting device structures. A partition structure is disposed on a first surface of the plurality of light-emitting device structures and is further disposed between adjacent light-emitting device structures of the plurality of light-emitting device structures. The partition structure defines a plurality of pixel spaces within the plurality of light-emitting device structures. A fluorescent layer is disposed on the first surface of the plurality of light-emitting device structures and fills each of the plurality of pixel spaces.
Public/Granted literature
- US20190326349A1 PIXEL-TYPE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-10-24
Information query
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