Invention Grant
- Patent Title: Method of manufacturing a semiconductor device and semiconductor device
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Application No.: US16925523Application Date: 2020-07-10
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Publication No.: US11302795B2Publication Date: 2022-04-12
- Inventor: Hans-Joachim Schulze , Jens Peter Konrath , Andre Rainer Stegner , Helmut Strack
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE10219118803.2 20190711
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/04 ; H01L29/66 ; H01L29/78 ; H01L29/16 ; H01L29/10
Abstract:
A method of manufacturing a semiconductor device is proposed. A silicon carbide, SiC, semiconductor body is provided. Ions are introduced into the SiC semiconductor body through a first surface of the SiC semiconductor body by at least one ion implantation process. Thereafter, a SiC device layer is formed on the first surface of the SiC semiconductor body. Semiconductor device elements are formed in or over the SiC device layer.
Public/Granted literature
- US20210013320A1 Method of Manufacturing a Semiconductor Device and Semiconductor Device Public/Granted day:2021-01-14
Information query
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