Invention Grant
- Patent Title: Delay locked loop circuit and semiconductor memory device having the same
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Application No.: US17109567Application Date: 2020-12-02
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Publication No.: US11309002B2Publication Date: 2022-04-19
- Inventor: Hundae Choi , Garam Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2020-0048631 20200422
- Main IPC: G11C7/22
- IPC: G11C7/22 ; H03L7/081 ; H03L7/085 ; G11C8/10 ; G11C7/10

Abstract:
A delay locked loop circuit and a semiconductor memory device are provided. The delay locked loop circuit includes a phase detection and delay control circuit configured to detect a phase difference between a first internally generated clock signal the feedback clock signal to generate a first phase difference detection signal in response to a first selection signal being activated, to detect a phase difference between a second internally generated clock signal and the feedback clock signal to generate a second phase difference detection signal in response to a second selection signal being activated, and to change a code value in response to the first phase difference detection signal or the second phase difference detection signal.
Public/Granted literature
- US20210335403A1 DELAYED LOCKED LOOP CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME Public/Granted day:2021-10-28
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