Invention Grant
- Patent Title: Three-dimensional stacking semiconductor assemblies and methods of manufacturing the same
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Application No.: US16440328Application Date: 2019-06-13
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Publication No.: US11309285B2Publication Date: 2022-04-19
- Inventor: Owen R. Fay , Chan H. Yoo , Mark E. Tuttle
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L21/56 ; H01L23/31 ; H01L23/532 ; H01L23/00

Abstract:
Semiconductor device packages and associated assemblies are disclosed herein. In some embodiments, the semiconductor device package includes a substrate having a first side and a second side opposite the first side, a first metallization layer positioned at the first side of the substrate, and a second metallization layer in the substrate and electrically coupled to the first metallization layer. The semiconductor device package further includes a metal bump electrically coupled to the first metallization layer and a divot formed at the second side of the substrate and aligned with the metal bump. The divot exposes a portion of the second metallization layer and enables the portion to electrically couple to another semiconductor device package.
Information query
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