Invention Grant
- Patent Title: Integrated acoustic filter on complementary metal oxide semiconductor (CMOS) die
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Application No.: US16116744Application Date: 2018-08-29
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Publication No.: US11309352B2Publication Date: 2022-04-19
- Inventor: Sinan Goktepeli , Stephen Alan Fanelli , Yun Han Chu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP/Qualcomm Incorporated
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/20 ; H03H9/05 ; H03H9/56 ; H03H3/02 ; H03H3/08 ; H03H9/64 ; H03H3/007 ; H03H9/10 ; H03H9/54 ; H03H9/46 ; B81C1/00 ; H03H1/00
Abstract:
A radio frequency (RF) front-end (RFFE) device includes a die having a front-side dielectric layer on an active device. The active device is on a first substrate. The RFFE device also includes a microelectromechanical system (MEMS) device. The MEMS device is integrated on the die at a different layer than the active device. The MEMS device includes a cap layer composed of a cavity in the front-side dielectric layer of the die. The cavity in the front-side dielectric layer is between the first substrate and a second substrate. The cap is coupled to the front-side dielectric layer.
Public/Granted literature
- US20190273116A1 INTEGRATED ACOUSTIC FILTER ON COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DIE Public/Granted day:2019-09-05
Information query
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