公开(公告)号：US10896958B2

公开(公告)日：2021-01-19

申请号：US16690454

申请日：2019-11-21

Applicant: QUALCOMM Incorporated

Inventor： Sinan Goktepeli ,  George Pete Imthurn ,  Yun Han Chu ,  Qingqing Liang

IPC: H01L29/10 ,  H01L21/285 ,  H01L21/74 ,  H01L21/84 ,  H01L27/12 ,  H01L29/45

Abstract: In certain aspects, an apparatus comprises an SOI MOSFET having a diffusion region as a source or a drain on a back insulating layer, wherein the diffusion region has a front diffusion side and a back diffusion side opposite to the front diffusion side; a silicide layer on the front diffusion side having a back silicide side facing the diffusion region and a front silicide side opposite to the back silicide side; and a backside contact connected to the silicide layer, wherein at least a portion of the backside contact is in the back insulating layer.

公开(公告)号：US11309352B2

公开(公告)日：2022-04-19

申请号：US16116744

申请日：2018-08-29

Applicant: QUALCOMM Incorporated

Inventor： Sinan Goktepeli ,  Stephen Alan Fanelli ,  Yun Han Chu

IPC: H01L27/00 ,  H01L27/20 ,  H03H9/05 ,  H03H9/56 ,  H03H3/02 ,  H03H3/08 ,  H03H9/64 ,  H03H3/007 ,  H03H9/10 ,  H03H9/54 ,  H03H9/46 ,  B81C1/00 ,  H03H1/00

Abstract: A radio frequency (RF) front-end (RFFE) device includes a die having a front-side dielectric layer on an active device. The active device is on a first substrate. The RFFE device also includes a microelectromechanical system (MEMS) device. The MEMS device is integrated on the die at a different layer than the active device. The MEMS device includes a cap layer composed of a cavity in the front-side dielectric layer of the die. The cavity in the front-side dielectric layer is between the first substrate and a second substrate. The cap is coupled to the front-side dielectric layer.

公开(公告)号：US10522626B2

公开(公告)日：2019-12-31

申请号：US15993679

申请日：2018-05-31

Applicant: QUALCOMM Incorporated

Inventor： Sinan Goktepeli ,  George Pete Imthurn ,  Yun Han Chu ,  Qingqing Liang

IPC: H01L29/10 ,  H01L27/12 ,  H01L21/285 ,  H01L21/84 ,  H01L21/74 ,  H01L29/45

Abstract: In certain aspects, an apparatus comprises an SOI MOSFET having a diffusion region as a source or a drain on a back insulating layer, wherein the diffusion region has a front diffusion side and a back diffusion side opposite to the front diffusion side; a silicide layer on the front diffusion side having a back silicide side facing the diffusion region and a front silicide side opposite to the back silicide side; and a backside contact connected to the silicide layer, wherein at least a portion of the backside contact is in the back insulating layer.