Invention Grant
- Patent Title: Power amplifier and compound semiconductor device
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Application No.: US16995902Application Date: 2020-08-18
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Publication No.: US11309852B2Publication Date: 2022-04-19
- Inventor: Isao Obu , Satoshi Tanaka , Takayuki Tsutsui , Yasunari Umemoto
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JPJP2017-222992 20171120,JPJP2018-140613 20180726
- Main IPC: H03F3/21
- IPC: H03F3/21 ; H03F3/19 ; H03F1/56 ; H03F1/02 ; H01L27/06 ; H01L21/8252

Abstract:
A power amplifier includes initial-stage and output-stage amplifier circuits, and initial-stage and output-stage bias circuits. The initial-stage amplifier circuit includes a first high electron mobility transistor having a source electrically connected to a reference potential, and a gate to which a radio-frequency input signal is inputted, and a first heterojunction bipolar transistor having an emitter electrically connected to a drain of the first high electron mobility transistor, a base electrically connected to the reference potential in an alternate-current fashion, and a collector to which direct-current power is supplied and from which a radio-frequency signal is outputted. The output-stage amplifier circuit includes a second heterojunction bipolar transistor having an emitter electrically connected to the reference potential, a base to which the radio-frequency signal outputted from the first heterojunction bipolar transistor is inputted, and a collector to which direct-current power is supplied and from which a radio-frequency output signal is outputted.
Public/Granted literature
- US20200382083A1 POWER AMPLIFIER AND COMPOUND SEMICONDUCTOR DEVICE Public/Granted day:2020-12-03
Information query
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