Invention Grant
- Patent Title: Plasma source for rotating susceptor
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Application No.: US17150702Application Date: 2021-01-15
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Publication No.: US11315769B2Publication Date: 2022-04-26
- Inventor: Kallol Bera , Anantha K. Subramani , John C. Forster , Philip A. Kraus , Farzad Houshmand , Hanhong Chen
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/687 ; H01L21/02 ; C23C16/50 ; C23C16/455 ; H01L21/67 ; C23C16/34 ; C23C16/509 ; C23C16/40 ; C23C16/458 ; C23C16/44
Abstract:
Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.
Public/Granted literature
- US20210166923A1 Plasma Source For Rotating Susceptor Public/Granted day:2021-06-03
Information query
