Invention Grant
- Patent Title: Solar cell emitter region fabrication using self-aligned implant and cap
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Application No.: US15436239Application Date: 2017-02-17
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Publication No.: US11316056B2Publication Date: 2022-04-26
- Inventor: Timothy Weidman
- Applicant: SUNPOWER CORPORATION
- Applicant Address: US CA San Jose
- Assignee: SUNPOWER CORPORATION
- Current Assignee: SUNPOWER CORPORATION
- Current Assignee Address: US CA San Jose
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/068 ; H01L31/0216 ; H01L31/0352 ; H01L31/18 ; H01L31/028 ; H01L31/0368 ; H01L31/04

Abstract:
Methods of fabricating solar cell emitter regions using self-aligned implant and cap, and the resulting solar cells, are described. In an example, a method of fabricating an emitter region of a solar cell involves forming a silicon layer above a substrate. The method also involves implanting, through a stencil mask, dopant impurity atoms in the silicon layer to form implanted regions of the silicon layer with adjacent non-implanted regions. The method also involves forming, through the stencil mask, a capping layer on and substantially in alignment with the implanted regions of the silicon layer. The method also involves removing the non-implanted regions of the silicon layer, wherein the capping layer protects the implanted regions of the silicon layer during the removing. The method also involves annealing the implanted regions of the silicon layer to form doped polycrystalline silicon emitter regions.
Public/Granted literature
- US20170162729A1 Solar Cell Emitter Region Fabrication Using Self-Aligned Implant and Cap Public/Granted day:2017-06-08
Information query
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