公开(公告)号：US10224442B2

公开(公告)日：2019-03-05

申请号：US15334706

申请日：2016-10-26

申请人： SUNPOWER CORPORATION

发明人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

IPC分类号： H01L31/0236 ,  H01L31/0352 ,  H01L33/44 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0745

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

公开(公告)号：US20220020894A2

公开(公告)日：2022-01-20

申请号：US17021930

申请日：2020-09-15

申请人： SunPower Corporation

发明人： Staffan Westerberg ,  Timothy Weidman ,  David D. Smith

IPC分类号： H01L31/18 ,  H01L31/068

摘要： Methods of fabricating solar cell emitter regions using substrate-level ion implantation, and resulting solar cells, are described. In an example, a method of fabricating a solar cell involves forming a lightly doped region in a semiconductor substrate by ion implantation, the lightly doped region of a first conductivity type of a first concentration. The method also involves forming a first plurality of dopant regions of the first conductivity type of a second, higher, concentration by ion implantation, the first plurality of dopant regions overlapping with a first portion of the lightly doped region. The method also involves forming a second plurality of dopant regions by ion implantation, the second plurality of dopant regions having a second conductivity type of a concentration higher than the first concentration, and the second plurality of dopant regions overlapping with a second portion of the lightly doped region and alternating with but not overlapping the first plurality of dopant regions.

公开(公告)号：US20190267499A1

公开(公告)日：2019-08-29

申请号：US16292112

申请日：2019-03-04

申请人： SunPower Corporation

发明人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/0745 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0352

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

公开(公告)号：US09401450B2

公开(公告)日：2016-07-26

申请号：US14562159

申请日：2014-12-05

申请人： SunPower Corporation

发明人： Timothy Weidman ,  David D. Smith

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/0352

CPC分类号： H01L31/182 ,  H01L31/022441 ,  H01L31/035272 ,  H01L31/0682 ,  H01L31/1864 ,  H01L31/1872 ,  H01L31/1876 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a method of fabricating alternating N-type and P-type emitter regions of a solar cell involves forming a silicon layer above a substrate. Dopant impurity atoms of a first conductivity type are implanted, through a first shadow mask, in the silicon layer to form first implanted regions and resulting in non-implanted regions of the silicon layer. Dopant impurity atoms of a second, opposite, conductivity type are implanted, through a second shadow mask, in portions of the non-implanted regions of the silicon layer to form second implanted regions and resulting in remaining non-implanted regions of the silicon layer. The remaining non-implanted regions of the silicon layer are removed with a selective etch process, while the first and second implanted regions of the silicon layer are annealed to form doped polycrystalline silicon emitter regions.

摘要翻译： 描述了使用离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。 在一个示例中，制造太阳能电池的交替的N型和P型发射极区域的方法涉及在衬底上形成硅层。 第一导电类型的掺杂杂质原子通过第一阴影掩模在硅层中注入以形成第一注入区，并产生硅层的非注入区。 通过第二阴影掩模，在硅层的非注入区域的一部分中注入第二相对导电类型的掺杂杂质原子，以形成第二注入区，并产生硅层的剩余未注入区。 通过选择性蚀刻工艺去除硅层的其余非注入区域，同时对硅层的第一和第二注入区域进行退火以形成掺杂的多晶硅发射极区域。

公开(公告)号：US11437530B2

公开(公告)日：2022-09-06

申请号：US16292112

申请日：2019-03-04

申请人： SunPower Corporation

发明人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0745 ,  H01L31/0352

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

公开(公告)号：US20220199842A1

公开(公告)日：2022-06-23

申请号：US17693054

申请日：2022-03-11

申请人： SunPower Corporation

发明人： Timothy Weidman

IPC分类号： H01L31/0224 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/04

摘要： Methods of fabricating solar cell emitter regions using self-aligned implant and cap, and the resulting solar cells, are described. In an example, a method of fabricating an emitter region of a solar cell involves forming a silicon layer above a substrate. The method also involves implanting, through a stencil mask, dopant impurity atoms in the silicon layer to form implanted regions of the silicon layer with adjacent non-implanted regions. The method also involves forming, through the stencil mask, a capping layer on and substantially in alignment with the implanted regions of the silicon layer. The method also involves removing the non-implanted regions of the silicon layer, wherein the capping layer protects the implanted regions of the silicon layer during the removing. The method also involves annealing the implanted regions of the silicon layer to form doped polycrystalline silicon emitter regions.

公开(公告)号：US11316056B2

公开(公告)日：2022-04-26

申请号：US15436239

申请日：2017-02-17

申请人： SUNPOWER CORPORATION

发明人： Timothy Weidman

IPC分类号： H01L31/0224 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/04

摘要： Methods of fabricating solar cell emitter regions using self-aligned implant and cap, and the resulting solar cells, are described. In an example, a method of fabricating an emitter region of a solar cell involves forming a silicon layer above a substrate. The method also involves implanting, through a stencil mask, dopant impurity atoms in the silicon layer to form implanted regions of the silicon layer with adjacent non-implanted regions. The method also involves forming, through the stencil mask, a capping layer on and substantially in alignment with the implanted regions of the silicon layer. The method also involves removing the non-implanted regions of the silicon layer, wherein the capping layer protects the implanted regions of the silicon layer during the removing. The method also involves annealing the implanted regions of the silicon layer to form doped polycrystalline silicon emitter regions.