Invention Grant
- Patent Title: EMIB copper layer for signal and power routing
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Application No.: US16319647Application Date: 2016-09-12
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Publication No.: US11322445B2Publication Date: 2022-05-03
- Inventor: Yidnekachew S. Mekonnen , Dae-Woo Kim , Kemal Aygun , Sujit Sharan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- International Application: PCT/US2016/051320 WO 20160912
- International Announcement: WO2018/048443 WO 20180315
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/48 ; H01L21/44 ; H01L23/538 ; H01L21/48 ; H01L23/498 ; H01L23/31 ; H01L23/522 ; H01L21/56 ; H01L23/00 ; H01L23/528 ; H01L25/065

Abstract:
Embedded Multi-die Interconnect Bridge (EMIB) technology provides a bridge die, where the EMIB includes multiple signal and power routing layers. The EMIB eliminates the need for TSVs required by the SIP assembly silicon interposers. In an embodiment, the EMIB includes at least one copper pad. The copper pad may be configured to protect the EMIB during wafer thinning. The copper pad may be connected to another copper pad to provide signal routing, thereby increasing the signal contact density. The copper pad may be configured to provide an increased power delivery to one or more connected dies.
Public/Granted literature
- US20210296240A1 EMIB COPPER LAYER FOR SIGNAL AND POWER ROUTING Public/Granted day:2021-09-23
Information query
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