Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16811910Application Date: 2020-03-06
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Publication No.: US11322668B2Publication Date: 2022-05-03
- Inventor: Seigo Namioka , Yasutaka Nakashiba
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2019-042173 20190308
- Main IPC: H01L33/58
- IPC: H01L33/58 ; H01S5/026 ; H01L25/16 ; H01L33/00

Abstract:
A semiconductor device includes a substrate, an optical element, and a semiconductor element. The substrate includes a first region and a second region which are regions differing from each other. The optical element is formed in one of the first region and the second region. The electric element is formed in another of the first region and the second region. The first region includes a first insulating layer and a first semiconductor layer formed on the first insulating layer. The second region includes the first insulating layer, the first semiconductor layer, a second insulating layer formed on the first semiconductor layer, and a second semiconductor layer formed on the second insulating layer.
Public/Granted literature
- US20200287108A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-09-10
Information query
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