Invention Grant
- Patent Title: Pressure sensor with improve hermeticity
-
Application No.: US16875918Application Date: 2020-05-15
-
Publication No.: US11326972B2Publication Date: 2022-05-10
- Inventor: Pei-Wen Yen , Yu-Tao Lee , Chung-Hsien Lin
- Applicant: InvenSense, Inc.
- Applicant Address: US CA San Jose
- Assignee: InvenSense, Inc.
- Current Assignee: InvenSense, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: G01L9/12
- IPC: G01L9/12 ; G01L19/06 ; G01L9/00

Abstract:
A sensor includes a substrate, an oxide layer, a membrane, an electrode, and a trench. The oxide layer is disposed on the substrate. The membrane is positioned on the oxide layer. The membrane with the oxide layer and the substrate forms an enclosed cavity therein. The membrane comprises a rigid portion and a deformable portion wherein the deformable portion of the membrane deforms responsive to stimuli. The oxide layer forms side walls of the cavity. The electrode is positioned on the substrate and within the cavity. The trench is formed in the oxide layer, and wherein the trench is covered with barrier material.
Information query