Invention Grant
- Patent Title: Air gap seal for interconnect air gap and method of fabricating thereof
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Application No.: US16817111Application Date: 2020-03-12
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Publication No.: US11328982B2Publication Date: 2022-05-10
- Inventor: Xusheng Wu , Youbo Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/482
- IPC: H01L23/482 ; H01L23/498 ; H01L21/768 ; H01L21/764 ; H01L29/417 ; H01L29/49

Abstract:
Interconnects that facilitate reduced capacitance and/or resistance and corresponding techniques for forming the interconnects are disclosed herein. An exemplary interconnect is disposed in an insulating layer. The interconnect has a metal contact, a contact isolation layer surrounding sidewalls of the metal contact, and an air gap disposed between the contact isolation layer and the insulating layer. An air gap seal for the air gap has a first portion disposed over a top surface of the contact isolation layer, but not disposed on a top surface of the insulating layer, and a second portion disposed between the contact isolation layer and the insulating layer, such that the second portion surrounds a top portion of sidewalls of the metal contact. The air gap seal may include amorphous silicon and/or silicon oxide. The contact isolation layer may include silicon nitride. The insulating layer may include silicon oxide.
Information query
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