Invention Grant
- Patent Title: Methods of forming a pattern and methods of fabricating a semiconductor device
-
Application No.: US16801613Application Date: 2020-02-26
-
Publication No.: US11333979B2Publication Date: 2022-05-17
- Inventor: Byounghoon Lee , Yongseok Jung , Jumi Bang , Byoungsup Ahn
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2019-0089754 20190724
- Main IPC: G03F7/095
- IPC: G03F7/095 ; H01L21/027 ; H01L21/311 ; H01L21/3213 ; H01L21/308 ; G03F7/16 ; G03F7/20 ; G03F7/26
Abstract:
Disclosed are methods of forming a pattern and methods of fabricating a semiconductor device. A method of fabricating a semiconductor device may include providing a substrate comprising a resist layer on the substrate and coating a compound on the resist layer to form a charge dissipation layer. The charge dissipation layer may include a conductive polymer and a metal complex.
Public/Granted literature
- US20210026245A1 METHODS OF FORMING A PATTERN AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE Public/Granted day:2021-01-28
Information query
IPC分类:
