公开(公告)号：US20210026245A1

公开(公告)日：2021-01-28

申请号：US16801613

申请日：2020-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Lee ,  Yongseok Jung ,  Jumi Bang ,  Byoungsup Ahn

IPC: G03F7/095 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/308 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26

Abstract: Disclosed are methods of forming a pattern and methods of fabricating a semiconductor device. A method of fabricating a semiconductor device may include providing a substrate comprising a resist layer on the substrate and coating a compound on the resist layer to form a charge dissipation layer. The charge dissipation layer may include a conductive polymer and a metal complex.

公开(公告)号：US11333979B2

公开(公告)日：2022-05-17

申请号：US16801613

申请日：2020-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Lee ,  Yongseok Jung ,  Jumi Bang ,  Byoungsup Ahn

IPC: G03F7/095 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/308 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26

Abstract: Disclosed are methods of forming a pattern and methods of fabricating a semiconductor device. A method of fabricating a semiconductor device may include providing a substrate comprising a resist layer on the substrate and coating a compound on the resist layer to form a charge dissipation layer. The charge dissipation layer may include a conductive polymer and a metal complex.