Invention Grant
- Patent Title: Method of forming stacked trench contacts and structures formed thereby
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Application No.: US16985691Application Date: 2020-08-05
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Publication No.: US11335639B2Publication Date: 2022-05-17
- Inventor: Bernhard Sell , Oleg Golonzka
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L21/768 ; H01L23/485 ; H01L23/522 ; H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L23/528 ; H01L23/532 ; H01L27/088 ; H01L29/08 ; H01L29/417
Abstract:
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain contact of a substrate, and a second contact metal disposed on a top surface of the first contact metal, wherein the second contact metal is disposed within an ILD disposed on a top surface of a metal gate disposed on the substrate.
Information query
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