Invention Grant
- Patent Title: Magnetoresistive random-access memory device including magnetic tunnel junctions
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Application No.: US16816322Application Date: 2020-03-12
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Publication No.: US11335850B2Publication Date: 2022-05-17
- Inventor: Karthik Yogendra , Robert Robison , Eric Raymond Evarts
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Jeffrey M. Ingalls
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/02 ; G11C11/16 ; H01L27/22 ; H01L43/10 ; H01L43/12
Abstract:
A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first free layer, forming a first tunnel barrier layer on the free layer, forming a reference layer on the first tunnel barrier layer, forming a second tunnel barrier layer on the reference layer, and forming a second free layer on the second tunnel barrier layer. An area of the second free layer is less than an area of the first free layer. Also, the first free layer, the first tunnel barrier layer and the reference layer are a first magnetic tunnel junction, and the reference layer, the second tunnel barrier layer and the second free layer are a second magnetic tunnel junction.
Public/Granted literature
- US20210288242A1 MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICE INCLUDING MAGNETIC TUNNEL JUNCTIONS Public/Granted day:2021-09-16
Information query
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