Invention Grant
- Patent Title: Method for epitaxial growth of single crystalline heterogeneous 2D materials and stacked structure
-
Application No.: US16587066Application Date: 2019-09-30
-
Publication No.: US11339499B2Publication Date: 2022-05-24
- Inventor: Soo Min Kim , Joo Song Lee , Hayoung Ko , Hye Young Koo
- Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Seoul
- Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Seoul
- Agency: Cantor Colburn LLP
- Priority: KR10-2018-0119738 20181008,KR10-2019-0028426 20190312
- Main IPC: C30B25/18
- IPC: C30B25/18 ; H01L21/02 ; C30B29/40 ; H01L29/20 ; C30B29/46 ; C30B29/68
Abstract:
Disclosed herein is a method for 2D epitaxial growth comprising: forming a single crystalline h-BN template; forming a plurality of nuclei by depositing a heterogeneous precursor on the h-BN template; and forming a heterogeneous structure layer by growing the plurality of deposited nuclei with a van der Waals epitaxial growth, wherein the heterogeneous structure layer is a single crystal.
Information query
IPC分类:
