- 专利标题: Circuit and method for process and temperature compensated read voltage for non-volatile memory
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申请号: US17006510申请日: 2020-08-28
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公开(公告)号: US11342031B2公开(公告)日: 2022-05-24
- 发明人: Marco Pasotti , Dario Livornesi , Roberto Bregoli , Vikas Rana , Abhishek Mittal
- 申请人: STMICROELECTRONICS S.R.L. , STMICROELECTRONICS INTERNATIONAL N.V.
- 申请人地址: IT Agrate Brianza; CH Geneva
- 专利权人: STMICROELECTRONICS S.R.L.,STMICROELECTRONICS INTERNATIONAL N.V.
- 当前专利权人: STMICROELECTRONICS S.R.L.,STMICROELECTRONICS INTERNATIONAL N.V.
- 当前专利权人地址: IT Agrate Brianza; CH Geneva
- 代理机构: Seed IP Law Group LLP
- 主分类号: G11C13/00
- IPC分类号: G11C13/00 ; G11C7/02 ; G11C16/26 ; G11C7/06 ; G11C7/14 ; G11C16/34 ; G11C16/08 ; G06F12/00
摘要:
An integrated circuit includes a memory array and a read voltage regulator that generates read voltages from the memory array. The read voltage regulator includes a replica memory cell and the replica bitline current path. The replica memory cell is a replica of memory cells of the memory array. The replica bitline current path is a replica of current paths associated with deadlines of the memory array. The read voltage regulator generates a read voltage based on the current passed through the replica bitline current path. This read voltage is then supplied to the wordlines of the memory array during a read operation.
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