- Patent Title: RF pulsing within pulsing for semiconductor RF plasma processing
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Application No.: US16888613Application Date: 2018-11-28
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Publication No.: US11342159B2Publication Date: 2022-05-24
- Inventor: Maolin Long , Yuhou Wang , Ying Wu , Alex Paterson
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Penilla IP, APC
- International Application: PCT/US2018/062765 WO 20181128
- International Announcement: WO2019/112849 WO 20190613
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H03K4/92
Abstract:
A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.
Public/Granted literature
- US20200335305A1 RF PULSING WITHIN PULSING FOR SEMICONDUCTOR RF PLASMA PROCESSING Public/Granted day:2020-10-22
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