Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US16839796Application Date: 2020-04-03
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Publication No.: US11342401B2Publication Date: 2022-05-24
- Inventor: Ji Eun Choi , Deok Hoi Kim , Jeong Hwan Kim , Jong Baek Seon , Jun Cheol Shin , Jae Hak Lee
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Priority: KR10-2019-0082715 20190709
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L51/00 ; H01L27/12 ; H01L29/24 ; H01L29/786 ; H01L29/66

Abstract:
A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.
Public/Granted literature
- US20210013280A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-01-14
Information query
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