DISPLAY DEVICE
    1.
    发明申请

    公开(公告)号:US20220293886A1

    公开(公告)日:2022-09-15

    申请号:US17685305

    申请日:2022-03-02

    IPC分类号: H01L51/52

    摘要: A display device includes: a first substrate; a second substrate disposed on the first substrate and including a plurality of voids; at least one inorganic layer disposed on the second substrate; at least one transistor disposed on the at least one inorganic layer; and a light-emitter disposed on the at least one transistor. The second substrate is in contact with the at least one inorganic layer and has a dielectric constant less than a dielectric constant of the at least one inorganic layer.

    Display apparatus and method of manufacturing the same

    公开(公告)号:US11239300B2

    公开(公告)日:2022-02-01

    申请号:US16592138

    申请日:2019-10-03

    IPC分类号: H01L27/32 H01L51/00

    摘要: A display apparatus includes a base substrate including a display area and a peripheral area, a conductive layer formed on the base substrate in an entirety of the peripheral area and the display area, a buffer layer on the conductive layer, a thin film transistor on the buffer layer in the display area, an electrode in a contact hole that is formed through the buffer layer to expose a side surface of the conductive layer in the peripheral area, the electrode making contact the conductive layer, an insulating pattern in the contact hole on the electrode, and a wiring on the insulating pattern and electrically connected to the electrode.

    Display apparatus and method of manufacturing the same

    公开(公告)号:US10950681B2

    公开(公告)日:2021-03-16

    申请号:US16580042

    申请日:2019-09-24

    摘要: A display apparatus includes a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area, a source/drain pattern on the base substrate, the source/drain pattern including a connecting electrode in a pad portion of the peripheral area and a electrode of a thin film transistor in the display area, a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the connecting electrode and a side surface of the electrode of the thin film transistor, and exposing a top surface of the connecting electrode, a connecting member contacting the connecting electrode, and a driving member including a driving circuit, the driving member being connected to the connecting member.

    ORGANIC LIGHT-EMITTING DIODE DISPLAY
    4.
    发明申请
    ORGANIC LIGHT-EMITTING DIODE DISPLAY 有权
    有机发光二极管显示

    公开(公告)号:US20170005156A1

    公开(公告)日:2017-01-05

    申请号:US15190100

    申请日:2016-06-22

    IPC分类号: H01L27/32

    摘要: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate including a display area configured to display an image and the display area includes first and second regions. A plurality of OLEDs are formed in the display area and separated from one another, and a plurality of pixel circuits are formed in the display area and include first and second pixel circuits respectively formed in the first and second regions. First and second contact holes are respectively formed in the first and second pixel circuits, each pixel circuit including thin film transistors (TFTs) including first and second TFTs and electrically connected to the OLEDs. Each pixel circuit includes a node line configured to electrically connect the first TFT to the second TFT through the first and second contact holes, and the first contact hole of is different from the second contact hole.

    摘要翻译: 公开了一种有机发光二极管(OLED)显示器。 一方面,显示器包括:衬底,其包括被配置为显示图像的显示区域,并且显示区域包括第一和第二区域。 多个OLED形成在显示区域中并且彼此分离,并且在显示区域中形成多个像素电路,并且包括分别形成在第一和第二区域中的第一和第二像素电路。 第一和第二接触孔分别形成在第一和第二像素电路中,每个像素电路包括包括第一和第二TFT的薄膜晶体管(TFT),并且电连接到OLED。 每个像素电路包括被配置为通过第一和第二接触孔将第一TFT电连接到第二TFT,并且第一接触孔不同于第二接触孔的节点线。

    Display apparatus and method of manufacturing the same

    公开(公告)号:US11552157B2

    公开(公告)日:2023-01-10

    申请号:US17177363

    申请日:2021-02-17

    摘要: A display apparatus includes a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area, a source/drain pattern on the base substrate, the source/drain pattern including a connecting electrode in a pad portion of the peripheral area and a electrode of a thin film transistor in the display area, a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the connecting electrode and a side surface of the electrode of the thin film transistor, and exposing a top surface of the connecting electrode, a connecting member contacting the connecting electrode, and a driving member including a driving circuit, the driving member being connected to the connecting member.

    Display device
    8.
    发明授权

    公开(公告)号:US11937457B2

    公开(公告)日:2024-03-19

    申请号:US17410699

    申请日:2021-08-24

    摘要: A display device is provided. The display device comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, a first sub-substrate disposed on the second base substrate and comprising at least one dopant selected from a group consisting of: fluorine (F), boron (B), arsenic (As), phosphorus (P), chlorine (Cl), bromine (Br), iodine (I), astatine (At), sulfur (S), selenium (Se), argon (Ar), and tellurium (Te), a second barrier layer disposed on the first sub-substrate, a second buffer layer disposed on the second barrier layer, a first buffer layer disposed on the second buffer layer, at least one transistor disposed on the first buffer layer, and an organic light-emitting diode disposed on the at least one transistor.

    Semiconductor device and method for fabricating the same

    公开(公告)号:US11342401B2

    公开(公告)日:2022-05-24

    申请号:US16839796

    申请日:2020-04-03

    摘要: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.