Display device including a crack detection line

    公开(公告)号:US10997881B2

    公开(公告)日:2021-05-04

    申请号:US15861582

    申请日:2018-01-03

    摘要: A display device includes a base substrate which includes a display area and a peripheral area, the peripheral area including a bending area; a first test signal line and a second test signal line which are located on the peripheral area; a lower insulating layer which is located on the first test signal line and the second test signal line; a first test connection pattern which is located on the lower insulating layer and connected to the first test signal line; a second test connection pattern which is located on the lower insulating layer, spaced apart from the first test connection pattern, and connected to the second test signal line; an upper insulating layer; and a first crack detection line which is located on the upper insulating layer, is connected to the first and second test connection patterns, and has at least a portion overlapping the bending area.

    Semiconductor device and method for fabricating the same

    公开(公告)号:US11342401B2

    公开(公告)日:2022-05-24

    申请号:US16839796

    申请日:2020-04-03

    摘要: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.