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公开(公告)号:US11903254B2
公开(公告)日:2024-02-13
申请号:US17739010
申请日:2022-05-06
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Ji Eun Choi , Deok Hoi Kim , Jeong Hwan Kim , Jong Baek Seon , Jun Cheol Shin , Jae Hak Lee
IPC: H10K59/12 , H10K59/121 , H10K59/123 , H10K59/126 , H10K77/10 , H01L27/12 , H01L29/24 , H01L29/786 , H01L29/66 , H10K102/00
CPC classification number: H10K59/1213 , H10K59/123 , H10K59/126 , H10K59/1216 , H10K77/111 , H01L27/1225 , H01L27/1251 , H01L27/1255 , H01L27/1259 , H01L29/24 , H01L29/66757 , H01L29/66969 , H01L29/7869 , H01L29/78633 , H01L29/78648 , H01L29/78675 , H10K59/1201 , H10K2102/311
Abstract: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.
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公开(公告)号:US09991287B2
公开(公告)日:2018-06-05
申请号:US15478386
申请日:2017-04-04
Applicant: Samsung Display Co., Ltd.
Inventor: Ji Hun Lim , Jong Baek Seon , Kyoung Seok Son , Eok Su Kim , Tae Sang Kim
IPC: H01L29/78 , H01L29/66 , H01L27/12 , H01L29/786
CPC classification number: H01L27/1225 , H01L27/124 , H01L27/1259 , H01L29/66969 , H01L29/78633 , H01L29/7869
Abstract: A thin film transistor array panel includes: a substrate; a semiconductor layer disposed on the substrate; a gate electrode disposed on the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer to not overlap the gate electrode, wherein a first edge of the gate electrode is aligned with a second edge of the semiconductor layer in a direction that is perpendicular to the substrate.
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公开(公告)号:US11937457B2
公开(公告)日:2024-03-19
申请号:US17410699
申请日:2021-08-24
Applicant: Samsung Display Co., Ltd.
Inventor: Jong Baek Seon , Deok Hoi Kim , Hun Kim
IPC: H10K59/121 , H01L27/12 , H10K77/10 , H10K102/00
CPC classification number: H10K59/1213 , H01L27/1218 , H10K77/111 , H10K2102/311
Abstract: A display device is provided. The display device comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, a first sub-substrate disposed on the second base substrate and comprising at least one dopant selected from a group consisting of: fluorine (F), boron (B), arsenic (As), phosphorus (P), chlorine (Cl), bromine (Br), iodine (I), astatine (At), sulfur (S), selenium (Se), argon (Ar), and tellurium (Te), a second barrier layer disposed on the first sub-substrate, a second buffer layer disposed on the second barrier layer, a first buffer layer disposed on the second buffer layer, at least one transistor disposed on the first buffer layer, and an organic light-emitting diode disposed on the at least one transistor.
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公开(公告)号:US11342401B2
公开(公告)日:2022-05-24
申请号:US16839796
申请日:2020-04-03
Applicant: Samsung Display Co., Ltd.
Inventor: Ji Eun Choi , Deok Hoi Kim , Jeong Hwan Kim , Jong Baek Seon , Jun Cheol Shin , Jae Hak Lee
Abstract: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.
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