Display device
    3.
    发明授权

    公开(公告)号:US11937457B2

    公开(公告)日:2024-03-19

    申请号:US17410699

    申请日:2021-08-24

    CPC classification number: H10K59/1213 H01L27/1218 H10K77/111 H10K2102/311

    Abstract: A display device is provided. The display device comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, a first sub-substrate disposed on the second base substrate and comprising at least one dopant selected from a group consisting of: fluorine (F), boron (B), arsenic (As), phosphorus (P), chlorine (Cl), bromine (Br), iodine (I), astatine (At), sulfur (S), selenium (Se), argon (Ar), and tellurium (Te), a second barrier layer disposed on the first sub-substrate, a second buffer layer disposed on the second barrier layer, a first buffer layer disposed on the second buffer layer, at least one transistor disposed on the first buffer layer, and an organic light-emitting diode disposed on the at least one transistor.

    Semiconductor device and method for fabricating the same

    公开(公告)号:US11342401B2

    公开(公告)日:2022-05-24

    申请号:US16839796

    申请日:2020-04-03

    Abstract: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.

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