Invention Grant
- Patent Title: Silicon carbide devices, semiconductor devices and methods for forming silicon carbide devices and semiconductor devices
-
Application No.: US16693909Application Date: 2019-11-25
-
Publication No.: US11342433B2Publication Date: 2022-05-24
- Inventor: Ralf Siemieniec , Thomas Aichinger , Iris Moder , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze , Carsten von Koblinski
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102018130385.8 20181129
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/16 ; H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L21/04 ; H01L29/45
Abstract:
A silicon carbide device includes a silicon carbide substrate having a body region and a source region of a transistor cell. Further, the silicon carbide device includes a titanium carbide gate electrode of the transistor cell.
Public/Granted literature
Information query
IPC分类:
