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公开(公告)号：US11940489B2
公开(公告)日：2024-03-26
申请号：US17502335
申请日：2021-10-15
IPC分类号： G01R31/311 , G01R31/00 , H01L25/16 , H01L25/18 , H01L27/144 , H03K17/687
CPC分类号： G01R31/311 , G01R31/00 , H01L25/167 , H01L25/18 , H01L27/1443 , H03K17/687
摘要： A semiconductor device includes: a semiconductor body; an electrical device formed in an active region of the semiconductor body, the active region including an interface between the semiconductor body and an insulating material; and a sensor having a bandwidth tuned to at least part of an energy spectrum of light emitted by carrier recombination at the interface when the electrical device is driven between accumulation and inversion, wherein an intensity of the emitted light is proportional to a density of charge trapping states at the interface, wherein the sensor is configured to output a signal that is proportional to the intensity of the sensed light. Corresponding methods of monitoring and characterizing the semiconductor device and a test apparatus are also described.
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公开(公告)号：US20230121426A1
公开(公告)日：2023-04-20
申请号：US17502335
申请日：2021-10-15
IPC分类号： G01R31/311 , H01L27/144 , H01L25/18 , H01L25/16 , H03K17/687
摘要： A semiconductor device includes: a semiconductor body; an electrical device formed in an active region of the semiconductor body, the active region including an interface between the semiconductor body and an insulating material; and a sensor having a bandwidth tuned to at least part of an energy spectrum of light emitted by carrier recombination at the interface when the electrical device is driven between accumulation and inversion, wherein an intensity of the emitted light is proportional to a density of charge trapping states at the interface, wherein the sensor is configured to output a signal that is proportional to the intensity of the sensed light. Corresponding methods of monitoring and characterizing the semiconductor device and a test apparatus are also described.
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公开(公告)号：US11462611B2
公开(公告)日：2022-10-04
申请号：US17111551
申请日：2020-12-04
发明人： Thomas Aichinger , Wolfgang Bergner , Paul Ellinghaus , Rudolf Elpelt , Romain Esteve , Florian Grasse , Caspar Leendertz , Shiqin Niu , Dethard Peters , Ralf Siemieniec , Bernd Zippelius
IPC分类号： H01L29/06 , H01L21/265 , H01L29/16 , H01L29/423 , H01L29/66 , H01L27/088
摘要： A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.
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公开(公告)号：US11417747B2
公开(公告)日：2022-08-16
申请号：US17072602
申请日：2020-10-16
IPC分类号： H01L29/10 , H01L29/16 , H01L29/43 , H01L29/423
摘要： In an example, a transistor device is provided. The transistor device includes a plurality of transistor cells each including a gate electrode and each at least partially integrated in a semiconductor body that includes a wide bandgap semiconductor material. The transistor device includes a gate pad arranged on top of the semiconductor body, and a plurality of gate runners each arranged on top of the semiconductor body and each connected to gate electrodes of at least some of the plurality of transistor cells. Each gate runner of the plurality of gate runners has a longitudinal direction, and at least one of the gate runners includes at least a section in which a resistivity per area increases in the longitudinal direction as a distance to the gate pad along the gate runner increases.
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公开(公告)号：US20220246745A1
公开(公告)日：2022-08-04
申请号：US17726618
申请日：2022-04-22
发明人： Ralf Siemieniec , Thomas Aichinger , Iris Moder , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze , Carsten von Koblinski
IPC分类号： H01L29/49 , H01L29/16 , H01L29/40 , H01L29/423 , H01L29/66 , H01L29/78 , H01L21/02 , H01L21/04 , H01L29/45
摘要： A silicon carbide device includes a semiconductor substrate comprising a body region and transistor cell that comprises a source region, and a titanium carbide field electrode of the transistor cell, wherein the titanium carbide field electrode is connected to a reference voltage metallization structure or connectable to the reference voltage metallization structure by a switching device, wherein the reference voltage metallization is connected to a fixed voltage that is independent from a gate voltage of the transistor cell.
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公开(公告)号：US10553685B2
公开(公告)日：2020-02-04
申请号：US15959661
申请日：2018-04-23
发明人： Ralf Siemieniec , Thomas Aichinger , Romain Esteve , Daniel Kueck
摘要： A semiconductor device includes a trench extending from a first surface into a SiC semiconductor body. The trench has a first sidewall, a second sidewall opposite to the first sidewall, and a trench bottom. A gate electrode is arranged in the trench and is electrically insulated from the SiC semiconductor body by a trench dielectric. A body region of a first conductivity type adjoins the first sidewall. A shielding structure of the first conductivity type adjoins at least a portion of the second sidewall and the trench bottom. A first section of the trench bottom and a second section of the trench bottom are offset to one another by a vertical offset along a vertical direction extending from the first surface to a second surface of the SiC semiconductor body opposite to the first surface.
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公开(公告)号：US20190355819A1
公开(公告)日：2019-11-21
申请号：US16412131
申请日：2019-05-14
IPC分类号： H01L29/16 , H01L29/66 , H01L29/78 , H01L29/423
摘要： A semiconductor device includes a gate electrode and a gate dielectric. The gate electrode extends from a first surface of a silicon carbide body into the silicon carbide body. The gate dielectric is between the gate electrode and the silicon carbide body. The gate electrode includes a metal structure and a semiconductor layer between the metal structure and the gate dielectric.
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8.发明申请公开(公告)号：US20170103894A1
公开(公告)日：2017-04-13
申请号：US15288349
申请日：2016-10-07
发明人： Thomas Aichinger , Wolfgang Bergner , Romain Esteve , Daniel Kueck , Dethard Peters , Victorina Poenariu , Gerald Reinwald , Roland Rupp , Gerald Unegg
CPC分类号： H01L21/0475 , H01L21/049 , H01L21/3065 , H01L29/0661 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/401 , H01L29/42376 , H01L29/4238 , H01L29/66068 , H01L29/7813 , H01L29/8613
摘要： A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.
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9.发明申请Semiconductor Device with Stripe-Shaped Trench Gate Structures and Gate Connector Structure 有权半导体器件带条状沟槽栅极结构和栅极连接器结构公开(公告)号：US20170077251A1
公开(公告)日：2017-03-16
申请号：US15358316
申请日：2016-11-22
发明人： Thomas Aichinger , Wolfgang Bergner
IPC分类号： H01L29/423 , H01L23/00 , H01L21/04 , H01L21/02 , H01L29/78 , H01L29/739 , H01L29/06 , H01L29/16
CPC分类号： H01L29/4236 , H01L21/02236 , H01L21/02255 , H01L21/049 , H01L21/823462 , H01L24/48 , H01L29/0696 , H01L29/1608 , H01L29/42368 , H01L29/4238 , H01L29/7397 , H01L29/7813 , H01L2924/00014 , H01L2224/05599 , H01L2224/45099
摘要： A semiconductor device includes a transistor cell with a stripe-shaped trench gate structure that extends from a first surface into a semiconductor body. A gate connector structure at a distance to the first surface is electrically connected to a gate electrode in the trench gate structure. A gate dielectric separates the gate electrode from the semiconductor body. First sections of the gate dielectric outside a vertical projection of the gate connector structure are thinner than second sections within the vertical projection of the gate connector structure.
摘要翻译： 半导体器件包括具有从第一表面延伸到半导体本体的条形沟槽栅极结构的晶体管单元。 距离第一表面一定距离的栅极连接器结构电连接到沟槽栅极结构中的栅电极。 栅极电介质将栅电极与半导体本体分开。 栅极连接器结构的垂直投影外部的栅极电介质的第一部分比栅极连接器结构的垂直投影内的第二部分薄。
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10.发明申请Semiconductor Device with Stripe-Shaped Trench Gate Structures, Transistor Mesas and Diode Mesas 审中-公开半导体器件带条状沟槽栅极结构，晶体管台面和二极管台面公开(公告)号：US20160190301A1
公开(公告)日：2016-06-30
申请号：US14975385
申请日：2015-12-18
IPC分类号： H01L29/78 , H01L29/04 , H01L29/06 , H01L29/10 , H01L29/739 , H01L29/861 , H01L29/08 , H01L29/16 , H01L27/02 , H01L29/423 , H01L27/06
CPC分类号： H01L29/7804 , H01L27/0207 , H01L27/0629 , H01L27/0727 , H01L29/04 , H01L29/045 , H01L29/0692 , H01L29/0696 , H01L29/0865 , H01L29/1095 , H01L29/1608 , H01L29/4236 , H01L29/7397 , H01L29/7813 , H01L29/861
摘要： A semiconductor device includes stripe-shaped trench gate structures that extend in a semiconductor body along a first horizontal direction. Transistor mesas between neighboring trench gate structures include body regions and source zones, wherein the body regions form first pn junctions with a drift structure and second pn junctions with the source zones. The source zones directly adjoin two neighboring trench gate structures, respectively. Diode mesas that include at least portions of diode regions form third pn junctions with the drift structure. The diode mesas directly adjoin two neighboring trench gate structures, respectively. The transistor mesas and the diode mesas alternate at least along the first horizontal direction.
摘要翻译： 半导体器件包括沿着第一水平方向在半导体本体中延伸的条形沟槽栅极结构。 相邻沟槽栅极结构之间的晶体管台面包括主体区域和源极区域，其中主体区域形成具有漂移结构的第一pn结和与源极区域的第二个pn结。 源极区分别直接邻接两个相邻的沟槽栅极结构。 包括二极管区域的至少一部分的二极管台面与漂移结构形成第三pn结。 二极管台面分别直接邻接两个相邻的沟槽栅极结构。 晶体管台面和二极管台面至少沿着第一水平方向交替。
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