Invention Grant
- Patent Title: Semiconductor memory structure with magnetic tunneling junction stack and method for forming the same
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Application No.: US16861224Application Date: 2020-04-29
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Publication No.: US11342496B2Publication Date: 2022-05-24
- Inventor: Hong-Hui Hsu , Wei-Chuan Chen , Qinli Ma , Shu-Jen Han
- Applicant: HeFeChip Corporation Limited
- Applicant Address: HK Sai Ying Pun
- Assignee: HeFeChip Corporation Limited
- Current Assignee: HeFeChip Corporation Limited
- Current Assignee Address: HK Sai Ying Pun
- Agent Winston Hsu
- Main IPC: H01L43/02
- IPC: H01L43/02 ; G11C11/16 ; H01F10/32 ; H01L27/22 ; H01L43/12 ; H01F41/32 ; H01L43/10
Abstract:
A semiconductor memory structure includes a substrate, a magnetic tunneling junction (MTJ) stack disposed on the substrate, and an encapsulation layer surrounding the MTJ stack. The encapsulation layer comprises an outer silicon oxynitride layer with a composition of SiOx1Ny1 and an inner silicon oxynitride layer with a composition of SiOx2Ny2, wherein x1/y1>x2/y2.
Public/Granted literature
- US20210343930A1 SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2021-11-04
Information query
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