公开(公告)号：US12108684B2

公开(公告)日：2024-10-01

申请号：US17315345

申请日：2021-05-09

Applicant: HeFeChip Corporation Limited

Inventor： Qinli Ma ,  Wei-Chuan Chen ,  Youngsuk Choi ,  Shu-Jen Han

IPC: H10N50/80 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/80 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/329 ,  H10B61/22 ,  H10N50/85 ,  H01F10/3286

Abstract: A magnetic tunneling junction (MTJ) element includes a reference layer, a tunnel barrier layer on the reference layer, a free layer on the tunnel barrier layer, and a composite capping layer on the free layer. The composite capping layer comprises a diffusion-stop layer on the free layer, a light-element sink layer on the diffusion-stop layer, and an amorphous layer on the light-element sink layer.

公开(公告)号：US11763972B2

公开(公告)日：2023-09-19

申请号：US17149750

申请日：2021-01-15

Applicant: HeFeChip Corporation Limited

Inventor： Qinli Ma ,  Youngsuk Choi ,  Shu-Jen Han

IPC: H01F10/32 ,  G11C11/16 ,  G01R33/09 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: H01F10/3272 ,  G01R33/093 ,  G01R33/098 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetic tunnel junction (MTJ) element including a free layer, a reference layer; and a tunnel barrier layer between the free layer and the reference layer. The reference layer includes a first pinned layer, a second pinned layer, an anti-ferromagnetic coupling (AFC) spacer layer between the first pinned layer and the second pinned layer, a first spacer layer adjacent to the second pinned layer, a second spacer layer, a ferromagnetic layer sandwiched by the first spacer layer and the second spacer layer, a polarization enhancement layer adjacent to the second spacer layer.

公开(公告)号：US20210265561A1

公开(公告)日：2021-08-26

申请号：US17315345

申请日：2021-05-09

Applicant: HeFeChip Corporation Limited

Inventor： Qinli Ma ,  Wei-Chuan Chen ,  Youngsuk Choi ,  Shu-Jen Han

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  H01F10/32 ,  G11C11/16

Abstract: A magnetic tunneling junction (MTJ) element includes a reference layer, a tunnel barrier layer on the reference layer, a free layer on the tunnel barrier layer, and a composite capping layer on the free layer. The composite capping layer comprises a diffusion-stop layer on the free layer, a light-element sink layer on the diffusion-stop layer, and an amorphous layer on the light-element sink layer.

公开(公告)号：US20210020215A1

公开(公告)日：2021-01-21

申请号：US16517649

申请日：2019-07-21

Applicant: HeFeChip Corporation Limited

Inventor： Qinli Ma ,  Wei-Chuan Chen ,  Youngsuk Choi ,  Shu-Jen Han

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic tunneling junction (MTJ) element is disclosed. The MTJ element includes a reference layer, a tunnel barrier layer on the reference layer, a free layer on the tunnel barrier layer, and a composite capping layer on the free layer. The composite capping layer includes an amorphous layer, a light-element sink layer, and/or a diffusion-stop layer. The composite capping layer is in direct contact with the free layer and forms a first interface with the free layer. The composite capping layer is in direct contact with a top electrode and forms a second interface with the top electrode.

公开(公告)号：US11538986B2

公开(公告)日：2022-12-27

申请号：US16848846

申请日：2020-04-15

Applicant: HeFeChip Corporation Limited

Inventor： Qinli Ma ,  Wei-Chuan Chen ,  Shu-Jen Han

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

Abstract: A storage layer of a magnetic tunnel junction (MTJ) element is disclosed. The storage layer having perpendicular magnetic anisotropy includes a first ferromagnetic layer, a first dust layer disposed directly on the first ferromagnetic layer, a second ferromagnetic layer disposed directly on the first dust layer, a second dust layer disposed directly on the second ferromagnetic layer, and a third ferromagnetic layer disposed directly on the second dust layer. A material of the first dust layer is different from a material of the second dust layer.

公开(公告)号：US20210328135A1

公开(公告)日：2021-10-21

申请号：US16848846

申请日：2020-04-15

Applicant: HeFeChip Corporation Limited

Inventor： Qinli Ma ,  Wei-Chuan Chen ,  Shu-Jen Han

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22

Abstract: A storage layer of a magnetic tunnel junction (MTJ) element is disclosed. The storage layer having perpendicular magnetic anisotropy includes a first ferromagnetic layer, a first dust layer disposed directly on the first ferromagnetic layer, a second ferromagnetic layer disposed directly on the first dust layer, a second dust layer disposed directly on the second ferromagnetic layer, and a third ferromagnetic layer disposed directly on the second dust layer. A material of the first dust layer is different from a material of the second dust layer.

公开(公告)号：US20200052192A1

公开(公告)日：2020-02-13

申请号：US16529805

申请日：2019-08-02

Applicant: HeFeChip Corporation Limited

Inventor： Qinli Ma ,  Youngsuk Choi ,  Shu-Jen Han

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22

Abstract: A composite storage layer for magnetic memory devices includes a first ferromagnetic layer, a tri-layered spacer stack disposed on the first ferromagnetic layer, a second ferromagnetic layer disposed on the tri-layered spacer stack, and an oxide capping layer on the second ferromagnetic layer. The tri-layered spacer stack comprises a first non-magnetic layer, a discontinuous, insulating oxide layer, and a second non-magnetic layer. The discontinuous, insulating oxide layer is sandwiched by the first non-magnetic layer and the second non-magnetic layer.

公开(公告)号：US11342496B2

公开(公告)日：2022-05-24

申请号：US16861224

申请日：2020-04-29

Applicant: HeFeChip Corporation Limited

Inventor： Hong-Hui Hsu ,  Wei-Chuan Chen ,  Qinli Ma ,  Shu-Jen Han

IPC: H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L27/22 ,  H01L43/12 ,  H01F41/32 ,  H01L43/10

Abstract: A semiconductor memory structure includes a substrate, a magnetic tunneling junction (MTJ) stack disposed on the substrate, and an encapsulation layer surrounding the MTJ stack. The encapsulation layer comprises an outer silicon oxynitride layer with a composition of SiOx1Ny1 and an inner silicon oxynitride layer with a composition of SiOx2Ny2, wherein x1/y1>x2/y2.

公开(公告)号：US20210343930A1

公开(公告)日：2021-11-04

申请号：US16861224

申请日：2020-04-29

Applicant: HeFeChip Corporation Limited

Inventor： Hong-Hui Hsu ,  Wei-Chuan Chen ,  Qinli Ma ,  Shu-Jen Han

IPC: H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/10 ,  H01L43/12 ,  H01F41/32 ,  H01L27/22

Abstract: A semiconductor memory structure includes a substrate, a magnetic tunneling junction (MTJ) stack disposed on the substrate, and an encapsulation layer surrounding the MTJ stack. The encapsulation layer comprises an outer silicon oxynitride layer with a composition of SiOx1Ny1 and an inner silicon oxynitride layer with a composition of SiOx2Ny2, wherein x1/y1>x2/y2.

公开(公告)号：US20210005809A1

公开(公告)日：2021-01-07

申请号：US16574103

申请日：2019-09-18

Applicant: HeFeChip Corporation Limited

Inventor： Qinli Ma ,  Wei-Chuan Chen ,  Youngsuk Choi ,  Shu-Jen Han

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16

Abstract: A method for fabricating a magnetic tunneling junction (MTJ) element is disclosed. A substrate is provided. A reference layer is formed on the substrate. A tunnel barrier layer is formed on the reference layer. A free layer is formed on the tunnel barrier layer. A composite capping layer is formed on the free layer. The composite capping layer comprises an amorphous layer, a light-element sink layer, and/or a diffusion-stop layer. The reference layer, the tunnel barrier layer, the free layer, and the composite capping layer constitute an MTJ stack.