Invention Grant
- Patent Title: Semiconductor device and method of making the same
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Application No.: US16535933Application Date: 2019-08-08
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Publication No.: US11348715B2Publication Date: 2022-05-31
- Inventor: Hong Sik Jung , Xueti Tang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: H01F10/32
- IPC: H01F10/32 ; H01L43/10 ; H01L43/12 ; G11C11/16 ; H01L43/02 ; H01F41/32
Abstract:
A perpendicular bottom-free-layer STT-MRAM cell includes a bottom-free-layer magnetic tunnel junction (BMTJ). The BMTJ includes a composite metal oxide seed layer, and a free layer comprising boron (B) on the composite metal oxide seed layer. The composite metal oxide seed layer includes a first metal layer; a metal oxide layer on the first metal layer; and a second metal layer on the metal oxide layer. The second metal layer has been oxygen treated.
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