公开(公告)号：US11348715B2

公开(公告)日：2022-05-31

申请号：US16535933

申请日：2019-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong Sik Jung ,  Xueti Tang

IPC: H01F10/32 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01F41/32

Abstract: A perpendicular bottom-free-layer STT-MRAM cell includes a bottom-free-layer magnetic tunnel junction (BMTJ). The BMTJ includes a composite metal oxide seed layer, and a free layer comprising boron (B) on the composite metal oxide seed layer. The composite metal oxide seed layer includes a first metal layer; a metal oxide layer on the first metal layer; and a second metal layer on the metal oxide layer. The second metal layer has been oxygen treated.