Invention Grant
- Patent Title: Method for producing a diode
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Application No.: US16909333Application Date: 2020-06-23
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Publication No.: US11348834B2Publication Date: 2022-05-31
- Inventor: Gregory Avenier , Alexis Gauthier , Pascal Chevalier
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Crowe & Dunlevy
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/8222 ; H01L27/06 ; H01L29/66 ; H01L29/737 ; H01L29/93 ; H01L21/3105 ; H01L21/8249
Abstract:
A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.
Information query
IPC分类:
