Capacitor structure for integrated circuit and related methods
Abstract:
Embodiments of the disclosure provide a capacitor for an integrated circuit (IC). The capacitor may include a first vertical electrode on an upper surface of a first conductor within a first wiring layer. A capacitor dielectric may be on an upper surface of the first vertical electrode. A second vertical electrode may be on an upper surface of the capacitor dielectric. The second vertical electrode is vertically between the capacitor dielectric and a second conductor. An inter-level dielectric (ILD) layer is adjacent to each of the first vertical electrode, the capacitor dielectric, and the second vertical electrode. The ILD layer is vertically between the first conductor and the second conductor.
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