Invention Grant
- Patent Title: Capacitor structure for integrated circuit and related methods
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Application No.: US17089775Application Date: 2020-11-05
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Publication No.: US11348867B2Publication Date: 2022-05-31
- Inventor: Dewei Xu , Sunil K. Singh , Seung-Yeop Kook , Roderick A. Augur
- Applicant: GLOBALFOUNDRIES U.S. INC.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Hoffman Warnick LLC
- Agent Anthony Canale
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L49/02

Abstract:
Embodiments of the disclosure provide a capacitor for an integrated circuit (IC). The capacitor may include a first vertical electrode on an upper surface of a first conductor within a first wiring layer. A capacitor dielectric may be on an upper surface of the first vertical electrode. A second vertical electrode may be on an upper surface of the capacitor dielectric. The second vertical electrode is vertically between the capacitor dielectric and a second conductor. An inter-level dielectric (ILD) layer is adjacent to each of the first vertical electrode, the capacitor dielectric, and the second vertical electrode. The ILD layer is vertically between the first conductor and the second conductor.
Public/Granted literature
- US20220139819A1 CAPACITOR STRUCTURE FOR INTEGRATED CIRCUIT AND RELATED METHODS Public/Granted day:2022-05-05
Information query
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