Invention Grant
- Patent Title: Capacitor structure, method of forming the same, semiconductor device including the capacitor structure and method of manufacturing the same
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Application No.: US17030152Application Date: 2020-09-23
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Publication No.: US11348995B2Publication Date: 2022-05-31
- Inventor: Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2019-0177914 20191230
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/469 ; H01L49/02 ; H01L27/108

Abstract:
A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
Public/Granted literature
Information query
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