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公开(公告)号：US11695034B2
公开(公告)日：2023-07-04
申请号：US17731032
申请日：2022-04-27
发明人： Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
IPC分类号： H01L21/469 , H01L21/02 , H01L49/02 , H01L27/108
CPC分类号： H01L28/91 , H01L27/10814 , H01L27/10855 , H01L28/92
摘要： A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
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公开(公告)号：US20220254873A1
公开(公告)日：2022-08-11
申请号：US17731032
申请日：2022-04-27
发明人： Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
IPC分类号： H01L49/02 , H01L27/108
摘要： A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
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公开(公告)号：US11348995B2
公开(公告)日：2022-05-31
申请号：US17030152
申请日：2020-09-23
发明人： Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
IPC分类号： H01L21/02 , H01L21/469 , H01L49/02 , H01L27/108
摘要： A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
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公开(公告)号：US20210202691A1
公开(公告)日：2021-07-01
申请号：US17030152
申请日：2020-09-23
发明人： Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
IPC分类号： H01L49/02 , H01L27/108
摘要： A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
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公开(公告)号：US09923047B2
公开(公告)日：2018-03-20
申请号：US14967956
申请日：2015-12-14
发明人： Se Hoon Oh , Seongyul Park , Chin Moo Cho , Yunjung Choi , Gyu-Hee Park , Youn-Joung Cho , Younsoo Kim , Jae Hyoung Choi
IPC分类号： H01L49/02 , H01L21/322
CPC分类号： H01L28/65 , H01L21/322 , H01L28/75
摘要： The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom electrode, a dielectric layer and a top electrode sequentially stacked on a substrate, and also where formation of the top electrode includes forming a first metal nitride layer on the dielectric layer, and forming a second metal nitride layer on the first metal nitride layer, in which the first metal nitride layer is disposed between the dielectric layer and the second metal nitride layer, and the first metal nitride layer is formed at a temperature lower than a temperature at which the second metal nitride layer is formed.
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