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公开(公告)号：US11695034B2
公开(公告)日：2023-07-04
申请号：US17731032
申请日：2022-04-27
发明人： Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
IPC分类号： H01L21/469 , H01L21/02 , H01L49/02 , H01L27/108
CPC分类号： H01L28/91 , H01L27/10814 , H01L27/10855 , H01L28/92
摘要： A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
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公开(公告)号：US20210202691A1
公开(公告)日：2021-07-01
申请号：US17030152
申请日：2020-09-23
发明人： Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
IPC分类号： H01L49/02 , H01L27/108
摘要： A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
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公开(公告)号：US09093460B2
公开(公告)日：2015-07-28
申请号：US14022865
申请日：2013-09-10
发明人： Beomseok Kim , Ohseong Kwon , Wandon Kim , Jaewan Chang , Kyuho Cho
IPC分类号： H01L49/02 , H01L27/108
CPC分类号： H01L28/60 , H01L27/10852 , H01L27/10894 , H01L28/75 , H01L28/91
摘要： The present inventive concept provides semiconductor devices that may include a capacitor including a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked. An electrode-protecting layer may be provided on the capacitor. The upper electrode may include a conductive metal oxide and the electrode-protecting layer may include a sacrificial reaction layer including a metal-hydrogen compound.
摘要翻译： 本发明构思提供半导体器件，其可以包括依次层叠的包括下电极，电介质层和上电极的电容器。 可以在电容器上设置电极保护层。 上电极可以包括导电金属氧化物，并且电极保护层可以包括包含金属 - 氢化合物的牺牲反应层。
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公开(公告)号：US20220254873A1
公开(公告)日：2022-08-11
申请号：US17731032
申请日：2022-04-27
发明人： Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
IPC分类号： H01L49/02 , H01L27/108
摘要： A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
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公开(公告)号：US11348995B2
公开(公告)日：2022-05-31
申请号：US17030152
申请日：2020-09-23
发明人： Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
IPC分类号： H01L21/02 , H01L21/469 , H01L49/02 , H01L27/108
摘要： A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
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公开(公告)号：US10090377B2
公开(公告)日：2018-10-02
申请号：US15424951
申请日：2017-02-06
发明人： Jaewan Chang , Younsoo Kim , Sunmin Moon , Jaehyoung Choi
IPC分类号： H01L49/02
摘要： A semiconductor device comprises a capacitor that includes a first electrode, a second electrode, and a dielectric layer between the first electrode and the second electrode. The dielectric layer comprises a first high-k dielectric layer between the first electrode and the second electrode, a first silicon oxide layer between the first high-k dielectric layer and the second electrode, and a first aluminum oxide layer between the first high-k dielectric layer and the second electrode.
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公开(公告)号：US20140103491A1
公开(公告)日：2014-04-17
申请号：US14022865
申请日：2013-09-10
发明人： Beomseok Kim , Ohseong Kwon , Wandon Kim , Jaewan Chang , Kyuho Cho
IPC分类号： H01L49/02
CPC分类号： H01L28/60 , H01L27/10852 , H01L27/10894 , H01L28/75 , H01L28/91
摘要： The present inventive concept provides semiconductor devices that may include a capacitor including a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked. An electrode-protecting layer may be provided on the capacitor. The upper electrode may include a conductive metal oxide and the electrode-protecting layer may include a sacrificial reaction layer including a metal-hydrogen compound.
摘要翻译： 本发明构思提供半导体器件，其可以包括依次层叠的包括下电极，电介质层和上电极的电容器。 可以在电容器上设置电极保护层。 上电极可以包括导电金属氧化物，并且电极保护层可以包括包含金属 - 氢化合物的牺牲反应层。
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