Invention Grant
- Patent Title: Structure and method for controlling electrostatic discharge (ESD) event in resistor-capacitor circuit
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Application No.: US17082182Application Date: 2020-10-28
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Publication No.: US11349304B2Publication Date: 2022-05-31
- Inventor: Alain F. Loiseau , Robert J. Gauthier, Jr. , Souvick Mitra , You Li , Meng Miao , Wei Liang
- Applicant: GLOBALFOUNDRIES U.S. INC.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US CA Santa Clara
- Agent Francois Pagette
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01L27/02

Abstract:
Embodiments of the disclosure provide a circuit structure and method to control electrostatic discharge (ESD) events in a resistor-capacitor (RC) circuit. Circuit structures according to the disclosure may include a trigger transistor coupled in parallel with the RC circuit, and a gate terminal coupled to part of the RC circuit. A mirror transistor coupled in parallel with the RC circuit transmits a current that is less than a current through the trigger transistor. A snapback device has a gate terminal coupled to a source or drain of the mirror transistor, and a pair of anode/cathode terminals coupled in parallel with the RC circuit. A current at the gate terminal of the snapback device, derived from current in the mirror transistor, controls an anode/cathode current flow in the snapback device.
Public/Granted literature
- US20220131369A1 STRUCTURE AND METHOD FOR CONTROLLING ELECTROSTATIC DISCHARGE (ESD) EVENT IN RESISTOR-CAPACITOR CIRCUIT Public/Granted day:2022-04-28
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