A semiconductor device includes a memory cell storing data. The memory cell capacitor includes a plurality of bottom electrodes on a substrate and extending in a vertical direction with respect to a top surface of the substrate, the plurality of bottom electrodes being spaced apart from each other in a first direction parallel to the top surface of the substrate, an upper support pattern on upper lateral surfaces of the plurality of bottom electrodes, and a lower support pattern on lower lateral surfaces of the plurality of bottom electrodes. The lower support pattern is disposed between the substrate and the upper support pattern, and a first bottom electrode of the plurality of bottom electrodes includes a first recess adjacent to a bottom surface of the lower support pattern.