公开(公告)号：US11355497B2

公开(公告)日：2022-06-07

申请号：US17077257

申请日：2020-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonho Son ,  Suklae Kim ,  Sejin Park ,  Seungjoong Shin ,  Hyuewon Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a memory cell storing data. The memory cell capacitor includes a plurality of bottom electrodes on a substrate and extending in a vertical direction with respect to a top surface of the substrate, the plurality of bottom electrodes being spaced apart from each other in a first direction parallel to the top surface of the substrate, an upper support pattern on upper lateral surfaces of the plurality of bottom electrodes, and a lower support pattern on lower lateral surfaces of the plurality of bottom electrodes. The lower support pattern is disposed between the substrate and the upper support pattern, and a first bottom electrode of the plurality of bottom electrodes includes a first recess adjacent to a bottom surface of the lower support pattern.