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公开(公告)号:US11355497B2
公开(公告)日:2022-06-07
申请号:US17077257
申请日:2020-10-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yoonho Son , Suklae Kim , Sejin Park , Seungjoong Shin , Hyuewon Lee
IPC: H01L27/108 , H01L49/02
Abstract: A semiconductor device includes a memory cell storing data. The memory cell capacitor includes a plurality of bottom electrodes on a substrate and extending in a vertical direction with respect to a top surface of the substrate, the plurality of bottom electrodes being spaced apart from each other in a first direction parallel to the top surface of the substrate, an upper support pattern on upper lateral surfaces of the plurality of bottom electrodes, and a lower support pattern on lower lateral surfaces of the plurality of bottom electrodes. The lower support pattern is disposed between the substrate and the upper support pattern, and a first bottom electrode of the plurality of bottom electrodes includes a first recess adjacent to a bottom surface of the lower support pattern.