Invention Grant
- Patent Title: Device comprising a transistor
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Application No.: US16995079Application Date: 2020-08-17
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Publication No.: US11355581B2Publication Date: 2022-06-07
- Inventor: Alexis Gauthier , Pascal Chevalier , Gregory Avenier
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Crowe & Dunlevy
- Priority: FR1909283 20190819
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/8222 ; H01L29/66 ; H01L29/732
Abstract:
A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.
Public/Granted literature
- US20210057521A1 DEVICE COMPRISING A TRANSISTOR Public/Granted day:2021-02-25
Information query
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