In some embodiments, the present disclosure relates to an integrated chip that includes a gate dielectric, a gate electrode, a field plate dielectric layer, and a field plate. The gate dielectric layer is arranged over a substrate and between a source region and a drain region. The gate electrode is arranged over the gate dielectric layer. The field plate dielectric layer is arranged over the substrate and between the gate dielectric layer and the drain region. The field plate is arranged over the field plate dielectric layer and is spaced apart from the gate dielectric layer.