Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
-
Application No.: US16986462Application Date: 2020-08-06
-
Publication No.: US11362113B2Publication Date: 2022-06-14
- Inventor: Hajime Watakabe , Toshihide Jinnai , Ryo Onodera , Akihiro Hanada
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JPJP2019-153539 20190826
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L29/00 ; H01L27/12 ; H01L29/66 ; H01L29/786

Abstract:
There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.
Public/Granted literature
- US20210066351A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-03-04
Information query
IPC分类: